Optical parametric oscillator and second harmonic generator using monoclinic phase Ga2S3 crystal

ABSTRACT

This disclosure provides an optical parametric oscillator, comprising, in a light path, a first lens, a laser crystal, a second lens, a nonlinear optical crystal, and a third lens in this order, wherein an optical parametric oscillation chamber is formed between the second lens and the third lens, and the nonlinear optical crystal is a monoclinic Ga 2 S 3  crystal, the space group of the monoclinic Ga 2 S 3  crystal is Cc, and the unit cell parameters are a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, and Z=4.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Divisional Application of U.S. patent application Ser. No. 14/565,133 (now U.S. Pat. No. 9,513,532), filed on Dec. 9, 2014, which is incorporated herein by reference in its entirety.

TECHNICAL FIELD

This disclosure relates to an optical parametric oscillator and a second harmonic generator using a monoclinic phase Ga₂S₃ crystal as infrared band second order nonlinear optical materials.

BACKGROUND

Optical parametric oscillators and second harmonic generators are commonly used nonlinear optical devices, and the second order nonlinear optical material is the key material for achieving the function thereof. For a second order nonlinear optical material in the infrared region, this disclosure uses a monoclinic phase Ga₂S₃ crystal which has never been used in the art, obtaining an optical parametric oscillator and a second harmonic generator having high laser damage threshold.

Because of the application of laser technology, the nonlinear optical crystal materials have drawn increasing attention of the public. In particular, the second order nonlinear optical crystal materials of deep ultraviolet and middle/far infrared regions, which are far from satisfying the requirements of the applications due to the lack of varieties, have become the hot spot of research. The chalcogenide system has become a direction of the research of middle/far infrared second order nonlinear optical crystal, wherein, for example, AgGaS₂ (AGS), AgGaSe₂ (AGSe), AgGa_((1-x))In_(x)Se₂, GaSe, LiInS₂ (LIS), LiInSe₂, and the like have drawn wide attention. These chalcogenides are mainly ternary compounds or more. Less attention is paid to the research of the second order nonlinear optical properties of binary chalcogenide compounds. However, comparing with the ternary compounds or more, the binary chalcogenides generally have the advantages of simple structure, convenient synthesis, stable physical and chemical features, and so on.

Ga₂S₃ has three crystal phases: monoclinic phase (Cc), hexagonal phase (P6₃mc) and cubic phase (F-43m), which are all noncentrosymmetric space groups, meaning that Ga₂S₃ may have second order nonlinear optical effects. In 1961, Goodyear et al. reported the monoclinic phase structure (Cc) of Ga₂S₃ in Acta Crystal for the first time. There is no report regarding using Ga₂S₃ as the infrared second order nonlinear optical materials hitherto.

There are two known synthetic methods for Ga₂S₃, both of which employ Ga and S elementary materials as the starting reactants. The first method comprises mixing Ga and S in a proper ratio, enclosing into a evacuated quartz tube, keeping at 450° C. for 5 days, and then heating at a rate of 50° C./12 h to a temperature of 1100° C., and naturally cooling down to obtain polycrystalline powders of Ga₂S₃. The second method comprises placing equal amount of Ga and S into two quartz boats in a flame-sealed quartz tube under a vacuum condition, heating the quartz boat containing Ga to 1150° C., and heating the quartz boat containing S to 450-500° C. After one day, polycrystalline powders of Ga₂S₃ are formed on one end of the quartz boat containing Ga. The Ga₂S₃ obtained in both methods are of a monoclinic phase. Embodiments of the disclosure use Ga₂O₃, S powder, and B powder as the starting materials, and synthesize monoclinic phase Ga₂S₃ employing a high temperature solid-state boron-sulfur method.

SUMMARY

In some embodiments of the disclosure, it is provided a second harmonic generator, comprising one or more nonlinear optical frequency conversioncrystal and a pump laser source, wherein the nonlinear optical frequency conversioncrystal is a monoclinic Ga₂S₃ crystal, the space group of the monoclinic Ga₂S₃ crystal is Cc, and the unit cell parameters are a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, and Z=4.

In some embodiments of the disclosure, it is provided an optical parametric oscillator, comprising, in the light path, a first lens, a laser crystal, a second lens, a nonlinear optical crystal, and third lens in this order, wherein an optical parametric oscillation chamber is formed between the second lens and the third lens, and the nonlinear optical crystal is a monoclinic Ga₂S₃ crystal, the space group of the monoclinic Ga₂S₃ crystal being Cc, and the unit cell parameters being a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, and Z=4.

DESCRIPTION OF FIGURES

FIG. 1 is the powder X-ray diffraction pattern of a compound of one embodiment of this disclosure.

FIG. 2 is the infrared absorption spectrum of a compound of one embodiment of this disclosure.

FIG. 3 is the UV-Vis diffuse reflectance spectroscopy of a compound of one embodiment of this disclosure.

FIG. 4 the phase matching pattern at 1910 nm of a compound of one embodiment of this disclosure.

FIG. 5 illustrates an optical parametric oscillator according to some embodiments of the present invention.

SPECIFIC EMBODIMENTS

In some embodiments disclosed in the disclosure, the pump laser source includes a liquid laser, a solid laser, a gas laser or a semiconductor laser.

In some embodiments disclosed in the disclosure, the wavelength of the laser emitted by the pump laser source is in a range of from 1 to 20 micrometers.

In some embodiments disclosed in the disclosure, the pump laser source includes a continuous wave laser, or a pulse laser.

In some embodiments disclosed in the disclosure, manners for achieving phase matching in the nonlinear optical crystal by the pump laser source comprise collinear, non-collinear, critical and non-critical phase matching.

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 0.5 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 1.0 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 1.5 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 2.0 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 2.5 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 3.0 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 3.5 to 5 cm².

In some embodiments disclosed in the disclosure, the area of the monoclinic Ga₂S₃ crystal is from 5 to 10 cm².

In some embodiments disclosed in the disclosure, the output power of the second harmonic generator is 0.5 W or more.

In some embodiments disclosed in the disclosure, the output power of the optical parametric oscillator is 0.5 W or more.

In some embodiments disclosed in the disclosure, it is provided a monoclinic Ga₂S₃ crystal material, and the preparation method thereof. The preparation method is simple and easy to be handled. The material sources are abundant. The yield of the compound is high. The purity is high and the reproductively is good. The preparation method is therefore suitable for mass production.

In some embodiments disclosed in the disclosure, not only the synthesis temperature (950° C.) is reduced, but also the complicated procedure of the traditional operation are avoided, and moreover, the cost is reduced because Ga₂O₃ with much lower price is used for replacing Ga.

In some specific embodiments disclosed in the disclosure, the disclosure comprises the following technical solutions:

A preparation method of a binary metal sulfide crystal material, wherein the metal sulfide is one of a chemical formula of Ga₂S₃, a monoclinic crystal system, and a Cc space group, and the unit cell parameters are a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, Z=4, wherein Ga₂O₃, B, and S are mixed and grinded at a proper ratio, loaded into a evacuated and flame-sealed quartz tube, and then treated at a certain temperature to obtain the monoclinic Ga₂S₃ product.

In some specific embodiments disclosed in the disclosure, the metal sulfide has a three dimensional network frame structure.

In some specific embodiments disclosed in the disclosure, the method is a high temperature solid-state boron-sulfur process for producing monoclinic phase Ga₂S₃.

In some specific embodiments disclosed in the disclosure, the molar ratio of the Ga₂O₃, B, and S is 1:2:3.

In some specific embodiments disclosed in the disclosure, the molar ratio of the Ga₂O₃, B, and S is 1:2:3, wherein the amount of S is additionally 1-3% in excess, preferably 1-2% in excess, to ensure the sufficient reaction.

In some specific embodiments disclosed in the disclosure, the treatment temperature is increased at a rate of 30 to 40° C./h to 850-980° C. (preferably 880-950° C., more preferably 900-950° C.), keeping such temperature for 48-144 hours (preferably 60-120 h, more preferably 60-100 h), and then decreased at a rate of 2 to 6° C./h (preferably 2-5° C./h, more preferably 2-4° C./h) to 250° C.

In some specific embodiments disclosed in the disclosure, the preparation method comprises mixing and grinding Ga₂O₃, B, and S at a molar ratio of 1:2:3 (preferably, wherein the amount of S is additionally 1-3% in excess), pressing into pellets and loading into a evacuated quartz tube to be heated, increasing the temperature at a rate of 30 to 40° C./h to 850-980° C. (preferably 880-950° C., more preferably 900-950° C.), keeping the temperature for 48-144 hours (preferably 60-120 h, more preferably 60-100 h), and then decreasing the temperature at a rate of 2 to 6° C./h (preferably 2-5° C./h, more preferably 2-4° C./h) to 250° C., turning off the power source, taking out the quartz tube, and washing away the byproduct B₂O₃ with hot water, to obtain monoclinic phase Ga₂S₃ as pale yellow microcrystal.

In some specific embodiments disclosed in the disclosure, the yield of the production method of the disclosure is 90% or more, preferably 95% or more, or 98% or more.

The specific reaction formula of the disclosure is: Ga₂O₃+2B+3S→Ga₂S₃+B₂O₃

In some specific embodiments disclosed in the disclosure, the disclosure also provides the use of the above binary metal chalcogenide monoclinic Ga₂S₃ having a three dimensional network frame structure as a nonlinear optical crystal.

In some specific embodiments disclosed in the disclosure, the use as second order nonlinear optical materials in the middle/far infrared regions is preferable. More preferably, the monoclinic Ga₂S₃ (preferably after it grows into big crystal) is used in the laser applications such as a second harmonic generator or an optical parametric oscillator, for extending the band range of the laser.

Some specific embodiments disclosed in the disclosure relate to the use of the monoclinic Ga₂S₃ as the second order nonlinear optical materials in the infrared region, wherein the material has a phase matching behavior at 1910 nm, and a powder second harmonic generation (SHG) signal which is 0.7 times of the commercial nonlinear optical crystal KTiOPO₄ (KTP).

Some specific embodiments disclosed in the disclosure relate to the use of the monoclinic phase Ga₂S₃ as second order nonlinear optical materials in the infrared region, wherein, under a 1064 nm laser having a pulse width of 8 ns, the material has a powder laser damage threshold of 174 MW/cm². This value is larger than the traditional infrared nonlinear optical crystal AGS (0.03 GW/cm²@1064 nm with τ_(p) as 10 ns) and LIS (0.1 GW/cm²@1064 nm with τ_(p) as 10 ns).

The features of the preparation method of some specific embodiments of the disclosure comprise, but not limit to: (1) the source materials are Ga₂O₃, S, and B, instead of traditional Ga, S; (2) the ratio between materials is a special ratio of 1:2:3, with S may be 1-3% slightly in excess, for ensuring sufficient reaction between the source materials; (3) because heating too fast may burst up the quartz tube, and cooling too fast may result in poor quality of crystal and the structural disorder, the constant temperature and the duration of the constant temperature employed in the disclosure determine the crystallization degree and the crystal size, such that embodiments of the disclosure may produce good nonlinear optical crystal materials.

The disclosure is further described by the following examples. However, the following examples do not limit the disclosure. Any replacement and variation made to the disclosure are within the scope of the disclosure.

The synthesis of the compound Ga₂S₃ in some embodiments of the disclosure comprises:

obtaining Ga₂S₃ by a high temperature solid state synthesis method, with the specific reaction formula being: Ga₂O₃+2B+3S→Ga₂S₃+B₂O₃.

The specific operation procedures are:

mixing Ga₂O₃, B, and S according a molar ratio of 1:2:3, pressing into pellets and loading into a evacuated and flame-sealed quartz tube, and then heating up at a rate of 30˜40° C./h to 850-980° C., keeping the temperature for 48-144 hours, and then cooling down at a rate of 2˜6° C./h to 250° C., finally, turning off the power supply, bringing out the quartz tube, washing away the byproduct B₂O₃ with hot water, to obtain pale yellow block compound microcrystal, with a yield of 90% or more. The single crystal X-ray diffraction measurement and elemental analysis test show that this crystal is a monoclinic phase Ga₂S₃.

Example 1: The Synthesis of 1 Mmol Monoclinic Phase Ga₂S₃

1 mmol of Ga₂O₃ (187 mg), 2 mmol of B powder (22 mg), and 3 mmol of S powder (97 mg, 1% in excess) were weighted, placed into an agate mortar and grinded for about 10 min to be uniformly mixed, and then the mixture was pressed into a pellet, which was sealed into a quartz tube having a length of about 10 cm, an outer diameter of 13 mm and an inner diameter of 11 mm with oxy-hydrogen flame under a degree of vacuum less than 10 Pa. The quartz tube was placed into a muffle furnace, and heated up at a rate of 30° C./h to 920° C. The temperature was kept for 60 hours, and then decreased at a rate of 5° C./h to 250° C. The power supply was turned off and the temperature was naturally reduced to room temperature. The quartz tube was taken out. After the tube was opened, it was washed with hot water to remove byproduct B₂O₃, obtaining about 1 mmol of monoclinic phase Ga₂S₃ polycrystalline powder, with a yield of 90% or more.

The crystal structure parameters in some embodiments of this disclosure are: a=11.117(9) Å, b=6.406(5) Å, c=7.033(5) Å, α=90°, β=121.15(9)°, γ=90°, Z=4. The crystal structure analysis shows that, this compound has a simple three dimensional network frame structure, crystallized at a noncentrosymmtric space group Cc.

Example 2: The Synthesis of 30 mmol Monoclinic Phase Ga₂S₃

30 mmol of Ga₂O₃ (5623 mg), 60 mmol of B powder (649 mg), 90 mmol of S powder (2943 mg, 2% in excess) were weighted, placed in a ball mill and milled at 400 r/min for 2 h to be uniformly mixed, and then the mixture was pressed into a pellet, which was sealed into a quartz tube having a length of about 15 cm, an outer diameter of 23 mm and an inner diameter of 20 mm with oxy-hydrogen flame under a degree of vacuum less than 10 Pa. The quartz tube was placed into a muffle furnace, and heated up at a rate of 30° C./h to 900° C. The temperature was kept for 60 hours, and then decreased at a rate of 5° C./h to 250° C. The power supply was turned off and the temperature was naturally reduced to room temperature. The quartz tube was taken out. After the tube was opened, it was washed with hot water to remove byproduct B₂O₃, obtaining about 30 mmol of monoclinic Ga₂S₃ polycrystalline powder, with a yield of 90% or more.

This example shows that the method may be used for massive synthesis monoclinic Ga₂S₃ polycrystalline powder, which is the basis of the growth of monoclinic Ga₂S₃ big crystal in the next step.

Example 3: The Synthesis of Monoclinic Ga₂S₃ Crystal

Monoclinic Ga₂S₃ crystal was grown using the Bridgman-Stockbarger method. The growth device of crystal was a modified two-zone Bridgman furnace. The controlling device was an 808P programmable automatic temperature controller. The source material used was 3 g of Ga₂S₃ polycrystalline material synthesized in Example 2.

Specific steps were as following. 3 g of Ga₂S₃ polycrystalline material prepared in Example 2 was weighted. After uniformly grinding, the material was loaded into a quartz tube crucible having an inner diameter of 15 mm and an outer diameter of 18 mm. After evacuated for 2-6 hours, the inner pressure of the quartz tube crucible is about 0.1 Pa, at this time, the tube was sealed with oxy-hydrogen flame, and the sealed quartz tube was loaded into a quartz tube having an inner diameter of 20 mm and an outer diameter of 23 mm. evacuated for 0.5-2 h, and when the inner pressure was slightly higher than 0.1 Pa, the tube was sealed with oxy-hydrogen flame. The sealed double layer quartz tube was placed into an upper furnace of a Bridgman furnace. The temperature was slowly increased to 700° C., and kept for 10 hours. The temperature was then increased to 950° C., and then kept for 10 hours. Finally, the temperature was increased to 1100° C. to melt the materials, and kept for 20-80 hours. At this time, the crucible was cooled to room temperature at a falling rate of 0.5 mm/h. The furnace was shut down. After the sample was cooled, transparent pale yellow Ga₂S₃ single crystal was obtained.

Example 4: Performance Test for the Monoclinic Phase Ga₂S₃ Powder

Powder X-ray diffraction test employed Rigaku Miniflex II diffractometer. This diffractometer used Cu target X-ray. The operating voltage and current were 30 KV and 15 mA, respectively. The scanning speed was 5 degrees/min. The scanning range was 5-65 degree. The simulated pattern of the powder diffraction is obtained by mercury software based on the single crystal structure of monoclinic Ga₂S₃.

Infrared transmission spectrum was obtained using Spectrum One Fourier transform infrared spectrograph manufactured by Perkin-Elmer. The testing range was 4000-400 cm⁻¹. The sample powder and KBr was sufficiently grinded at a ratio of 1:100 and pressed for testing. There was no obvious adsorption peak in the range of 4000-400 cm⁻¹.

An ultraviolet diffuse reflectance spectrum was measured using Lambda 900 UV-vis-near infrared spectrograph manufactured by Perkin-Elmer. An integrating sphere was employed. The testing range was 190-2500 nm. A BaSO₄ plate was used as reference. Sufficiently grinded sample powder was placed thereon. The absorption spectrum is calculated from diffuse reflectance spectrum using Kubelka-Munk formula α/S=(1−R)²/2R (R is the reflectivity, S is the scattering coefficient, α is the absorption coefficient).

As shown by FIGS. 1, 2, and 3, there was no impure peak in powder diffraction pattern, indicating a high purity of the compound prepared by the high temperature solid-state boron-sulfur method. Infrared transmission spectrum showed that the compound was infrared transparent in the range of 2.5-25 μm. UV-vis diffuse reflectance spectrum showed that the energy gap of the compound was about 2.80 eV.

Example 5: SHG Phase Matching Test of the Monoclinic Ga₂S₃ Powder

The monoclinic Ga₂S₃ polycrystalline powder was sieved with a steel sieve, and divided into six powder samples having particle size ranges of 30-50, 50-75, 75-100, 100-150, 150-200, and 200-300 m, respectively. The samples were charged and placed on the light path of the laser. The intensities of SHG signals thereof at an infrared laser wavelength of 1910 nm were measured with a near infrared CCD. The phase matching behavior of the compound was judged after a diagram was made. The testing results of the powder SHG phase matching were shown in FIG. 4.

As shown by FIG. 4, the second order nonlinear optical effect test showed that, this compound had a relatively large second order nonlinear optical effect. The SHG signals of the sample increased as the particle size thereof increased. The intensities of SHG signal were about 0.7 times of that of KTP, and the monoclinic Ga₂S₃ phase matched under 1910 nm laser. It may be used as a nonlinear optical crystal material.

Example 6: Laser Damage Threshold Test of Monoclinic Phase Ga₂S₃

The monoclinic phase Ga₂S₃ polycrystalline powder was sieved as the powder sample having a particle size range of 50-75 μm with a steel sieve. After the sample was charged, the laser damage threshold thereof was measured under a laser at 1064 nm having a pulse width of about 8 ns. The powder of the laser was continuously increased, and the damage situation of the sample was observed, until damage spot occurred on the sample. The laser power at this time was recorded, and the main damage spot area was measured as 2.45 mm².

The laser damage threshold test of polycrystalline powder sample showed that, the laser damage threshold of this compound was 174 MW/cm², which was larger than that of classical infrared nonlinear crystal AGS (0.03 GW/cm²@1064 nm with τ_(p) as 10 ns) and LIS (0.1 GW/cm²@1064 nm with τ_(p) as 10 ns).

Example 7

The crystal obtained in Example 3 was subjected to directionally cutting and polishing treatment, to make an optical parametric device. A Q-switched Nd:YAG laser light source having wavelength of 1.064 μm was used as the pump light source, to produce a laser output of 3-14 micrometers.

Example 8

The crystal obtained in Example 3 was subjected to directionally cutting and polishing treatment, to make an optical parametric device. A Q-switched Nd:YAG laser light source having wavelength of 1.34 μm was used as the pump source, to produce a laser output of 3-14 micrometers.

Example 9

The crystal obtained in Example 3 was subjected to directionally cutting and polishing treatment, to make an optical parametric device. A Q-switched Ho:YAG laser light source having wavelength of 2.06 μm was used as the pump source, to produce a laser output of 3-14 micrometers.

Example 10: The Performance Test of the Second Harmonic Generator

A second harmonic generator was produced using the monoclinic Ga₂S₃ crystal produced in Example 3 as the nonlinear optical frequency conversion crystal, and a pump laser source. It was observed via output profile test that, this second harmonic generator may still produce good output profile at high output.

Example 11: The Performance Test of the Optical Parametric Oscillator

An optical parametric oscillator was produced using the monoclinic Ga₂S₃ crystal prepared in Example 3 as a nonlinear optical frequency conversion crystal, a first lens, a laser crystal, and a second lens. It was observed via output profile test that, this optical parametric oscillator may still produce good output profile at high output.

FIG. 5 illustrates an optical parametric oscillator 500 according to some embodiments of the present invention. As illustrated in FIG. 5, optical parametric oscillator 500 includes, in a light path, a first lens 502, a laser crystal 504, a second lens 506, a nonlinear optical crystal 508, and a third lens 510, all in that order. An optical parametric oscillation chamber 514 is formed between the second lens 506 and the third lens 510. Nonlinear optical crystal 508 may be a monoclinic Ga_(s)S₃ crystal, with space group Cc, and unit cell parameters a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, and Z=4. As is further illustrated in FIG. 5, a pump source 512 may further be included. 

The invention claimed is:
 1. An optical parametric oscillator, comprising, in a light path, a first lens, a laser crystal, a second lens, a nonlinear optical crystal, and a third lens in this order, wherein an optical parametric oscillation chamber is formed between the second lens and the third lens, and the nonlinear optical crystal is a monoclinic Ga₂S₃ crystal, the space group of the monoclinic Ga₂S₃ crystal being Cc, and the unit cell parameters being a=11.1 Å, b=6.4 Å, c=7.0 Å, α=90°, β=121°, γ=90°, and Z=4.
 2. The optical parametric oscillator according to claim 1, wherein a laser wavelength output by the structure composed of the first lens, the laser crystal and the second lens is from 3 to 14 micrometers.
 3. The optical parametric oscillator according to claim 2, wherein an output power of the optical parametric oscillator is 0.5 W or more.
 4. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 0.5 to 5 cm².
 5. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 3.5 to 5 cm².
 6. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 5 to 10 cm².
 7. The optical parametric oscillator according to claim 1, wherein a laser wavelength output by the structure composed of the first lens, the laser crystal and the second lens is from 1 to 20 micrometers.
 8. The optical parametric oscillator according to claim 7, wherein an output power of the optical parametric oscillator is 0.5 W or more.
 9. The optical parametric oscillator according to claim 7, wherein a liquid laser, a solid laser, a gas laser or a semiconductor laser is used as a pump laser source for a structure composed of the first lens, the laser crystal and the second lens.
 10. The optical parametric oscillator according to claim 7, wherein a continuous wave laser or a pulse laser is used as a pump laser source for a structure composed of the first lens, the laser crystal and the second lens.
 11. The optical parametric oscillator according to claim 7, wherein infrared light sources with wavelength ranges from 1 to 20 micrometers are used as a signal light source for a structure composed of the first lens, the laser crystal and the second lens.
 12. The optical parametric oscillator according to claim 11, wherein the infrared light sources comprise incandescent lamp, Xe lamp, SiC rod, infrared light emitting diode, and infrared laser diode.
 13. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 1.0 to 5 cm².
 14. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 1.5 to 5 cm².
 15. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 2.0 to 5 cm².
 16. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 2.5 to 5 cm².
 17. The optical parametric oscillator according to claim 1, wherein an area of the monoclinic Ga₂S₃ crystal is from 3.0 to 5 cm². 